Детайли за публикацията
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Autors: Alexandrov D., Tot J., Dubreuil R., Morales F.M., Mánuel J.M., Jiménez J.J., Lacroix B., García R., Videkov, V. V., Andreev, S. K., Tzaneva, B. R., Bartsch H., Pezoldt J., Fischer M., Mueller J.
Title: Low temperature epitaxial deposition of GaN on LTCC substrates
Keywords: epitaxial deposition of GaN, anodic aluminum oxide, LTCC substrate, MOCVD

Abstract: Technological results about low temperature epitaxial deposition of GaN layers on LTCC substrates are reported. Epitaxial growths of GaN layers have been performed on commercially available LTCC substrates at 540 °C. Pre-growth preparations of the LTCC substrates has been carried out by aluminum oxide buffering layers on the LTCC surface. Further depositions have been performed in an epitaxial reactor using metal organic chemical vapor deposition (MOCVD) techniques with trimethylgallium (TMGa) and either RF or DC nitrogen plasma for different samples in a remote exposure configuration. The traditional precursor flow in MOCVD has been modified to separately introduce each precursor to the chamber, allowing increased lateral migration of adatoms and reduced vapour parasitics. The grown layers have been characterized by XRD, SEM, EDX, CTEM and HRTEM measurements. GaN (0002) XRD measurements show FWHM of 0.22° for peak position at 34.86° as the variations around these values for different

References

    Issue
    IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), pp. doi 10.1109/WiPDA.2017.8170501, 2017, United States, IEEE, ISBN 978-1-5386-3117-1

    Вид: публикация в международен форум, публикация в реферирано издание, индексирана в Scopus и Web of Science

    Въведена от: доц. д-р Боряна Рангелова Цанева