Детайли за публикацията
(Publication details)

Оригинал (Original)
Автори: Врублевски И., Чернякова К., Видеков, В. Х., Цанева, Б. Р., Ячовски А.
Заглавие: Превключващ ефект в нанопорист оксид на алуминия при анодна поляризация
Ключови думи: аноден алуминиев оксид, анодна поляризация, превключващ ефект

Абстракт: Разгледан е ефектът на превключване при анодна поляризация на нанопорест аноден алуминиев оксид. Оксидът е получен в потенциостатичен режим във воден разтвор на фосфорна киселина. Измерванията показват възпроизводимост на резултата. Коментирано е изменението на съпротивлението на пората за приложение като енергонезависими памети.

Библиография

  1. Sulka, G. D., 2008, Highly ordered anodic porous alumina formation by self-organized anodizing. Nanostructured Materials in Electrochemistry, Weinheim, Wiley–VCH GmbH & Co. KGaA
  2. Jagminas, A., A. e nien , I. Vrublevsky, V. Jasulaitien , R. Ragalevicius., 2008, Behavior of alumina barrier layer in the supporting electrolytes for deposition of nanowired materials, Electrochim. Acta., том 55, стр. стр. 3361-3367
  3. Lee, J., S. Nigo, Y. Nakano, S. Kato, H. Kitazawa, G. Kido, 2010, Structural analysis of anodic porous alumina used for resistive random access memory, Sci. Technol. Adv. Mater., том 11, стр. стр. 025002–025006
  4. Vrublevsky, I., A. Jagminas, J. Schreckenbach, W. A. Goedel, 2007, Electronic properties of electrolyte/anodic alumina junction during porous anodizing, J. Appl. Surf. Sci., том 253, стр. стр. 4680–4687
  5. Vrublevsky, I., V. Parkoun, J. Schreckenbach, W. A. Goedel, 2006, Dissolution behaviour of the barrier layer of porous oxide films on aluminum formed in phosphoric acid studied by a re-anodizing technique, J. Appl. Surf. Sci., том 252, стр. стр. 5100–5108
  6. Nakata Shunjiq, 2006, Non-volatile Al2O3 Memory using Nanoscale Al-rich Al2O3 Thin Film as a Charge Storage Layer, Japanese Journal of Applied Physics. Part 2. Letters, том 45, стр. стр. 3176-3178
  7. Lin Chih-Yang ; Wu Chen-Yu ; Wu Chung-Yi ; Chenming Hu ; Tseng Tseung-Yuen, 1950, Bistable resistive switching in Al2O3 memory thin films, Journal of the Electrochemical Society, том 154, стр. стр. 189-192

Издание
Годишник на Техническия университет - София, том 60, брой 3, стр. стр. 157-163, 2010, България, София, Технически университет-София, ISSN 1311-0829

Autors: Vrublevski I., Chernyakova K., Videkov, V. H., Tzaneva, B. R., Yachovski A.
Title: Switching effect in nanoporous alumina at the anode polarization
Keywords: anodic aluminium oxide, anodic polarization, switching effect

Abstract: Switching effect of porous alumina has been studied by the anodic polarization of structures electrolyte-anodic alumina-aluminum. The anodic alumina films were formed in the aqueous solutions of phosphoric acid in the potentiostatic mode. In accordance with our measurements switching characteristics of anodic alumina were of the high reproducibility. Made a comment about the change of resistance of the pores for applications in nonvolatile memory.

References

  1. Sulka, G. D., 2008, Highly ordered anodic porous alumina formation by self-organized anodizing. Nanostructured Materials in Electrochemistry, Weinheim, Wiley–VCH GmbH & Co. KGaA
  2. Jagminas, A., A. e nien , I. Vrublevsky, V. Jasulaitien , R. Ragalevicius., 2008, Behavior of alumina barrier layer in the supporting electrolytes for deposition of nanowired materials, Electrochim. Acta., том 55, стр. стр. 3361-3367
  3. Lee, J., S. Nigo, Y. Nakano, S. Kato, H. Kitazawa, G. Kido, 2010, Structural analysis of anodic porous alumina used for resistive random access memory, Sci. Technol. Adv. Mater., том 11, стр. стр. 025002–025006
  4. Vrublevsky, I., A. Jagminas, J. Schreckenbach, W. A. Goedel, 2007, Electronic properties of electrolyte/anodic alumina junction during porous anodizing, J. Appl. Surf. Sci., том 253, стр. стр. 4680–4687
  5. Vrublevsky, I., V. Parkoun, J. Schreckenbach, W. A. Goedel, 2006, Dissolution behaviour of the barrier layer of porous oxide films on aluminum formed in phosphoric acid studied by a re-anodizing technique, J. Appl. Surf. Sci., том 252, стр. стр. 5100–5108
  6. Nakata Shunjiq, 2006, Non-volatile Al2O3 Memory using Nanoscale Al-rich Al2O3 Thin Film as a Charge Storage Layer, Japanese Journal of Applied Physics. Part 2. Letters, том 45, стр. стр. 3176-3178
  7. Lin Chih-Yang ; Wu Chen-Yu ; Wu Chung-Yi ; Chenming Hu ; Tseng Tseung-Yuen, 1950, Bistable resistive switching in Al2O3 memory thin films, Journal of the Electrochemical Society, том 154, стр. стр. 189-192

Issue
Proceedings of the Technical University – Sofia, vol. 60, issue 3, pp. 157-163, 2010, Bulgaria, Sofia, Technical University – Sofia, ISSN 1311-0829

Вид: статия в списание, индексирана в Google Scholar

Въведена от: доц. д-р Боряна Рангелова Цанева