|Autors: Ivanova, T., Harizanova, A., Koutzarova, T., Vertruyen, B., Stefanov, B. I.|
Title: Structural and morphological characterization of sol-gel ZnO: Ga films: Effect of annealing temperatures
Keywords: Thin films, Sol-gel, Gallium-doped zinc oxide, Microstructure, Morphology, Optical properties
Abstract: Sol-gel technology has been successfully applied for obtaining ZnO:Ga films by spin coating method. Their structural and optical properties are studied depending on the doping contents and on the annealing temperatures varying from 300 to 600 °C. The Ga doping has been achieved by dissolving 1, 2 and 3 wt% Ga(NO3) into Zn sol solution. The structural analysis performed by X-Ray diffraction (XRD) shows a deterioration of the film crystallization with gallium incorporation. The XRD study reveals no impurity peaks associated to metallic gallium or gallium oxide phases. Vibrational properties have been characterized by Fourier Transform Infrared (FTIR) spectroscopy. FTIR analysis gives no certain evidence for presence of Ga oxide phases, but the absorption bands are clearly affected by Ga additive and there can be possible overlapping of ZnO and GaO vibrations. The sol-gel ZnO:Ga films possess higher transparency in the visible spectral range compared to zinc oxide films.
Вид: статия в списание, публикация в издание с импакт фактор, публикация в реферирано издание, индексирана в Scopus и Web of Science
Въведена от: гл. ас. д-р Божидар Ивайлов Стефанов