Autors: Angelov, G. V., Spasova, M. L., Nikolov, D. N., Ruskova, I. N., Rusev, R. P.
Title: Extraction of Model Parameters for 14-nm Bulk FinFET
Keywords: FinFETT, compact model, parameter extraction

Abstract: Extraction procedure for 14 nm bulk FinFET devices is realized in Matlab. Parameters selected for extraction include the threshold voltage at zero bulk voltage (VT0), the output conductance parameter ( ), the parameter, which models the transition between linear and saturation regions (MEXP), the subthreshold parameter ( ), and the transconductance (gch). The extraction is based on experimental measurements of 14-nm FinFETs wafers. Extracted parameters are simulated in a PTM MG SPICE model for verification.



    ISSE 2018, pp. 1-4, 2018, Serbia, ISSN 2161-2536

    Вид: публикация в международен форум, публикация в реферирано издание, индексирана в Scopus