Autors: Spasova, M. L., Angelov, G. V., Boris Dobrichkov., Gadjeva, E. D., Hristov, M. H.
Title: DRAM design based on carbon nanotube field effect transistors
Keywords: Integrated circuit modeling, CNTFETs, Capacitors, Random access memory, Semiconductor device modeling, Simulation, Decoding

Abstract: In this paper a 16-bit DRAM memory based on 1T DRAM cell using 2-bit decoder is presented. The DRAM circuit implements two model types: the Stanford University compact model and a simplified CNTFET model derived from the Stanford model. Simulation results showed good matching of both models behavior, which proves the applicability of the simplified model to memory circuits.

References

    Issue

    Electronics Technology (ISSE), pp. 372 – 377, 2016, Czech Republic, ISSN 2161-2064

    Вид: публикация в международен форум, индексирана в Scopus