|Autors: Spasova, M. L., Angelov, G. V., Boris Dobrichkov., Gadjeva, E. D., Hristov, M. H.|
Title: DRAM design based on carbon nanotube field effect transistors
Keywords: Integrated circuit modeling, CNTFETs, Capacitors, Random access memory, Semiconductor device modeling, Simulation, Decoding
Abstract: In this paper a 16-bit DRAM memory based on 1T DRAM cell using 2-bit decoder is presented. The DRAM circuit implements two model types: the Stanford University compact model and a simplified CNTFET model derived from the Stanford model. Simulation results showed good matching of both models behavior, which proves the applicability of the simplified model to memory circuits.
Вид: публикация в международен форум, индексирана в Scopus