Autors: Spasova, M. L., Nikolov, D. N., Angelov, G. V., Radonov, R. I., Hristov, M. H.
Title: Analysis of the impact of CNTFET model parameters on its transfer and output characteristics
Keywords: CNTFETs, Integrated circuit modeling, Mathematical model, Numerical models, Cost function, Semiconductor device modeling, Carbon nanotubes

Abstract: The influence of internal parameters on transfer and output characteristics of a Carbon Nanotube Field Effect Transistor are studied in this paper. For the purposes of the study a CNTFET compact model is used. The compact CNTFET model is coded in Verilog-A and it is simulated in Cadence Spectre circuit simulator. In particular, we have examined how the transfer and output characteristics are altering when changing single parameters or sets of parameters. To compare the simulations results a cost function consisting of the two parameters is employed to quantify the impact of 430 model parameters. The sum of total 430 model parameters are examined and 59 are found to have negligible or no impact on output static characteristics. Three groups of internal model parameters have been recognized, according to their impact on output static characteristics.

References

    Issue

    Scientific Conference Electronics (ET), International, pp. 1-4, 2016, Bulgaria, ISBN 978-1-5090-2883-2

    Цитирания (Citation/s):
    1. S. M. Ishraqul Huq, Maskura Nafreen, Tasnim Rahman, Sushovan Bhadra, "Comparative study of full adder circuit with 32nm MOSFET DG-FinFET and CNTFET", Advances in Electrical Engineering (ICAEE) 2017 4th International Conference on, pp. 38-43, 2017, ISSN 2378-2692. - 2017 - от чужди автори в чужди издания, неиндексирани в Scopus или Web of Science
    2. Shrivastava, A.Email Author, Damahe, P.Email Author, Kumbhare, V.R.Email Author, Majumder, M.K., Designing SRAM using CMOS and CNTFET at 32 nm technology, Proceedings - 2019 IEEE International Symposium on Smart Electronic Systems, iSES 2019 December 2019, Article number 9002502, Pages 284-287 - 2019 - в издания, индексирани в Scopus или Web of Science
    3. Dargar, S.K., Srivastava, V.M., Analysis of short channel effects in multiple-gate (N, 0) carbon nanotube FETs, Journal of Engineering Science and TechnologyOpen Access Volume 14, Issue 6, 2019, Pages 3282-3293 - 2019 - в издания, индексирани в Scopus или Web of Science
    4. Huq, S.M.I., Nafreen, M., Rahman, T., Bhadra, S., Comparative study of full adder circuit with 32nm MOSFET, DG-FinFET and CNTFET, 4th International Conference on Advances in Electrical Engineering, ICAEE 2017 Volume 2018-January, 1 July 2017, Pages 38-43 - 2017 - в издания, индексирани в Scopus или Web of Science
    5. Patel P., J. Dave, Mohmadsohil M., C. Sheth, R. Gajab, M. Dadhania, Р. Parekh, CNTFET: Comparative Study of Planar and Coaxial, 2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience and Nanotechnology, 5NANO 2022, 2022, ISBN 978-166543728-8 DOI 10.1109/5NANO53044.2022.9828964 - 2022 - в издания, индексирани в Scopus или Web of Science

    Вид: публикация в международен форум, индексирана в Scopus