Autors: Spasova, M. L., Nikolov, D. N., Angelov, G. V., Radonov, R. I., Hristov, N. H.
Title: SRAM Design Based on Carbon Nanotube Field Effect Transistor's Model with Modified Parameters
Keywords: CNTFETs, Random access memory, Integrated circuit modeling, Measurement, Numerical models, Computational modeling, Simulation

Abstract: The paper presents a design of SRAM circuit using CNTFET transistors. The complete model describing CNTFET, developed in Stanford University is modified for the purpose of designing a 6T (2×2) SRAM memory cell. The simulation results of the CNTFET SRAM memory cell manifest usability and applicability of the modified CNTFET model in designing digital circuits. The simplified CNTFET model is coded in Verilog-A and is implemented as a symbol in Cadence standard cell libraries. In order to develop a simplified CNTFET model, 430 complete model parameters are studied and estimated. The impact of the complete model parameters over the output and transfer static characteristics has been taken into consideration and parameters with effect lower than 0.0025% are neglected.

References

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Issue

2017 40th International Spring Seminar on Electronics Technology (ISSE), pp. 1-4, 2017, Bulgaria, 2161-2536, doi: 10.1109/ISSE.2017.8000953

Copyright IEEE Xplore

Цитирания (Citation/s):
1. Cheng, R., Zhu, Y., Wu, S., Yu, Y., Gao, J., Zhou, W., Zhou, W., Modification of a carbon nanotube FET compact model for digital circuit simulation, 2020, Semiconductor Science and Technology Volume 35, Issue 8, August 2020, Article number 085007, DOI: 10.1088/1361-6641/ab8d0d - 2020 - в издания, индексирани в Scopus или Web of Science
2. Mathur, N., S. Birla, Performance Evaluation and Comparison of CNTFET-Based 7T SRAM with 6T SRAM. In Proceedings of 6th International Conference on Recent Trends in Computing: ICRTC 2020 (p. 117). Springer Nature. DOI: 10.1007/978-981-33-4501-0_12 - 2021 - в издания, индексирани в Scopus или Web of Science
3. Mathur, N., Birla, S. Performance Evaluation and Comparative Analysis between Traditional CNTFET Based 9 T SRAM Cells. Silicon (2022). ISSN 1876-9918, https://doi.org/10.1007/s12633-022-01895-1 - 2022 - в издания, индексирани в Scopus или Web of Science
4. Kumar, H.,S. Srivastava, B. Singh, Performance and Stability Analysis of CNTFET SRAM Cell Topologies for Ultra-Low Power Applications, Wearable and Neuronic Antennas for Medical and Wireless Applications (2022), https://doi.org/10.1002/9781119792581.ch7, Print ISBN:9781119791805 |Online ISBN:9781119792581 - 2022 - в издания, индексирани в Scopus или Web of Science
5. Mathur N., S. Birla, D. Sharma, Impact of Variation of Performance Parameters on the Efficiency of CNTFET Based 7T SRAM Cells, Intelligent Computing Techniques for Smart Energy Systems: Proceedings of ICTSES 2021, Springer, 2022, pp. 155-163, ISSN 1876-1100, ISSN 1876-1119 (electronic) - 2022 - от чужди автори в чужди издания, неиндексирани в Scopus или Web of Science
6. Shahrabadi, S., Challenges and solutions of working under threshold supply‐voltage, for CNTFET‐based SRAM‐bitcell. IET Circuits Devices Syst. 1–12 (2022). https://doi.org/10.1049/cds2.12126 - 2022 - в издания, индексирани в Scopus или Web of Science

Вид: постер/презентация в международен форум, публикация в реферирано издание, индексирана в Scopus