Autors: Ruskova, I. N., Stoynova, A. V., Takov, T. B.
Title: Back-bias voltage influence on Hall-effect microsensors
Keywords: .

Abstract: In this paper we have examined the back-bias effect and its influence on Hall microsensor's behavior, which is manufactured on 0,18 um CMOS technology. Then the sensor's parametric reliability was tested at the temperature range of -40 degrees C to +150 degrees C. The purpose of the constructed Hall cell is to improve sensor's characteristics, achieving high sensitivity with minimal parasitic offset effects.

References

    Issue

    2016 6TH ELECTRONIC SYSTEM-INTEGRATION TECHNOLOGY CONFERENCE (ESTC), 2016, Albania,

    Вид: пленарен доклад в международен форум, публикация в реферирано издание, индексирана в Scopus