Autors: Asparuhova, K. K., Grigorova, T. G.
Title: IGBT Behavioral PSPICE Model
Keywords: PSPICE model, IGBT, ABM method

Abstract: Behavioral IGBT macromodel for OrCad PSPICE simulator is presented. The model is parameterized and it is implemented as a subcircuit in the simulator. The nonlinear DC equations and voltage-controlled capacitors are precisely represented using ABM method, which is resulting in good accuracy. The static I-V characteristics offered by the behavioral model are shown. The tailing of the anode currents simulated by the behavioral model at a constant anode voltage-switching test are given. The good agreement between the simulation and experimental results can be observed in the paper

References

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Issue

Microelectronics, 2006 25th International Conference on, pp. 203 - 206, 2006, Serbia, IEEE, DOI 10.1109/ICMEL.2006.1650931 / ISBN 1-4244-0117-8

Copyright IEEE Conference Publications

Цитирания (Citation/s):
1. Y HADINI, A GALADI, A ECHCHELH, IGBT SPICE MODEL WITH SIMPLE PARAMETER EXTRACTION PROCEDURE, Journal of Electrica Engineering, Vol 20 No 5 (2020), ISSN 1582-4594 - 2020 - от чужди автори в чужди издания, неиндексирани в Scopus или Web of Science
2. L Han, L Liang, Y Kang, A SiC IGBT Behavioral Model with High Accuracy and Fast Convergence, 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), 23-25 Sept. 2020, DOI: 10.1109/WiPDAAsia49671.2020.9360262 - 2020 - в издания, индексирани в Scopus или Web of Science
3. M. Silva, A. Bitencourt, B. Wanderley França, G. Gonçalves Sotelo and A. Braz Krstic, "Analysis of an IGBT Behavioral Electrothermal Model," 2023 IEEE 8th Southern Power Electronics Conference and 17th Brazilian Power Electronics Conference (SPEC/COBEP), Florianopolis, Brazil, 2023, pp. 1-7, doi: 10.1109/SPEC56436.2023.10408204. - 2023 - в издания, индексирани в Scopus или Web of Science

Вид: публикация в международен форум, публикация в реферирано издание, индексирана в Scopus