Autors: Asparuhova, K. K., Grigorova, T. G. Title: IGBT Behavioral PSPICE Model Keywords: PSPICE model, IGBT, ABM method Abstract: Behavioral IGBT macromodel for OrCad PSPICE simulator is presented. The model is parameterized and it is implemented as a subcircuit in the simulator. The nonlinear DC equations and voltage-controlled capacitors are precisely represented using ABM method, which is resulting in good accuracy. The static I-V characteristics offered by the behavioral model are shown. The tailing of the anode currents simulated by the behavioral model at a constant anode voltage-switching test are given. The good agreement between the simulation and experimental results can be observed in the paper References
Issue
Copyright IEEE Conference Publications |
Цитирания (Citation/s):
1. Y HADINI, A GALADI, A ECHCHELH, IGBT SPICE MODEL WITH SIMPLE PARAMETER EXTRACTION PROCEDURE, Journal of Electrica Engineering, Vol 20 No 5 (2020), ISSN 1582-4594 - 2020 - от чужди автори в чужди издания, неиндексирани в Scopus или Web of Science
2. L Han, L Liang, Y Kang, A SiC IGBT Behavioral Model with High Accuracy and Fast Convergence, 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), 23-25 Sept. 2020, DOI: 10.1109/WiPDAAsia49671.2020.9360262 - 2020 - в издания, индексирани в Scopus или Web of Science
Вид: публикация в международен форум, публикация в реферирано издание, индексирана в Scopus