Autors: Asparuhova, K. K., Grigorova, T. G.
Title: IGBT Behavioral PSPICE Model
Keywords: PSPICE model, IGBT, ABM method

Abstract: Behavioral IGBT macromodel for OrCad PSPICE simulator is presented. The model is parameterized and it is implemented as a subcircuit in the simulator. The nonlinear DC equations and voltage-controlled capacitors are precisely represented using ABM method, which is resulting in good accuracy. The static I-V characteristics offered by the behavioral model are shown. The tailing of the anode currents simulated by the behavioral model at a constant anode voltage-switching test are given. The good agreement between the simulation and experimental results can be observed in the paper

References

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Issue

Microelectronics, 2006 25th International Conference on, pp. 203 - 206, 2006, Serbia, IEEE, DOI 10.1109/ICMEL.2006.1650931 / ISBN 1-4244-0117-8

Copyright IEEE Conference Publications

Цитирания (Citation/s):
1. Y HADINI, A GALADI, A ECHCHELH, IGBT SPICE MODEL WITH SIMPLE PARAMETER EXTRACTION PROCEDURE, Journal of Electrica Engineering, Vol 20 No 5 (2020), ISSN 1582-4594 - 2020 - от чужди автори в чужди издания, неиндексирани в Scopus или Web of Science
2. L Han, L Liang, Y Kang, A SiC IGBT Behavioral Model with High Accuracy and Fast Convergence, 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), 23-25 Sept. 2020, DOI: 10.1109/WiPDAAsia49671.2020.9360262 - 2020 - в издания, индексирани в Scopus или Web of Science

Вид: публикация в международен форум, публикация в реферирано издание, индексирана в Scopus