Autors: Alexandrova, S. P., Valcheva, P, E., Kobilarov, R. G.
Keywords: Silicon, Silicon oxynitride, Ion implantation, Thermal oxidation

Abstract: In the present study the formation of nitrogen containing ulrtathin films on Si is discussed using ion implantation by two technological schemes: implantation of N + into Si followed by thermal oxidation and N + implantation in already formed SiO2 is discussed. The nitrogen profiles in the silicon structures are evaluated through Monte Carlo simulations. The energy implantation was chosen in the low range of 5 to 10 keV. The fluence was 10 14 cm -2 . The implantation profile during thermal processing (annealing and oxidation) was modeled using standard diffusion equations. The temper


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ELECTRONICS’ 2005,21 – 23 September, vol. 5, pp. 38-43, 2005, Bulgaria,

Вид: пленарен доклад в международен форум