Autors: Alexandrova, S. A., Valcheva, P, E., Dimitrov, K, S., Manova, I, D.
Title: ALN THIN FILMS GROWN BY REACTIVE MAGNETRON SPUTTERING FOR MICROELECTRONICS APPLICATIONS
Keywords: Nitrides, AlN, dc-magnetron sputtering, Structural defects

Abstract: The growth of AlN by different deposition methods is frequently reported, because of its optoelectronic, thermal and acoustic properties providing a potential for application, i.e. as metal-insulator-metal (MIM) structures, electro-acoustic and electro-optical devices. The substrates mostly used are Al2O3, SiC, Si. Silicon is of special interest because of its importance in the contemporary device technology and the possibility to integrate different functions, e.g., UV-detection or emission and Si-ICs on a common substrate. Reactive dcmagnetron sputter deposition has shown promising res

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Issue

ELECTRONICS’ 2005,21 – 23 September, vol. 5, pp. 21-24, 2005, Bulgaria,

Вид: пленарен доклад в международен форум