Autors: Shehadi M., Karatodorov S., Stoychev L., Yankov G., Tsankov, D. T., Shivachev B., Petrov, T. P.
Title: Modified femtosecond Z-scan measurement of nonlinear optical characteristics of wide bandgap semiconductor AlN with applications in optoelectronics
Keywords: Photon absorption, Optoelectronics, Z-scan technique, Semico

Abstract: We employed a modified femtosecond single-laser pulse approach to the well-known Z-scan technique for measuring the third-order nonlinear index of refraction n2 and the two-photon absorption (TPA) coefficient β of AlN in the visible range (λ=515 nm). Our implementation of the Z-scan technique uses virtual aperture which allows for better accuracy and for determination of both n2 and β from a single Z-scan experiment. The results obtained for single crystal AlN samples are n2 = 1.25±0.1 x10-15 cm2/W and β= 0.10±0.02 cm/GW.

References

    Issue

    AIP Conference Proceedings, vol. 2939, issue 1, 2023, Bulgaria, AIP, ISBN 978-073544763-9

    Вид: публикация в международен форум, публикация в реферирано издание, индексирана в Scopus