Autors: Asparuhova, K. K., Grigorova, T. G.
Keywords: IGBT behavioral model, SPICE simulator, parameterized macromodel Hammerstein configuration

Abstract: The behavioral IGBT model for OrCad PSpice simulator is presented. The model is parameterized and it is implemented as a subcircuit in the simulator. The nonlinear DC equations and voltage-controlled capacitor are precisely represented using ABM method, which is resulting in good accuracy. The static I-V characteristics offered by the behavioral model are shown. The tailing of the anode currents simulated by the behavioral model at a constant anode voltage-switching test are given. The good agreement between the simulation and experimental results can be observed in the paper.


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ELECTRONICS’ 2005,21 – 23 September, vol. 1, pp. 71-76, 2005, Bulgaria,

Вид: пленарен доклад в международен форум