| Autors: Minkov, D. A., Angelov, G. V., E. Marquez., Radonov, R. I., Rusev, R. P., S. Ruano. Title: Increasing the accuracy of characterization of a thin semiconductor or dielectric film on a substrate only from one quasi-normal incidence UV/Vis/NIR reflectance spectrum of the sample Keywords: thin film; semiconductor or insulator; accurate characteriza Abstract: OEMT is an existing optimizing envelope method for thin-film characterization that uses only one transmiance spectrum, T(λ), of the film deposited on the substrate. OEMT computes the optimized values of the average thickness, d, and the thickness non-uniformity, Δd, employing variables for the external smoothing of T(λ), the slit width correction, and the optimized wavelength intervals for the computation of d and Δd, and taking into account both the finite size and absorption of the substrate. Our group had achieved record low relative errors, < 0.1%, in d of thin semiconductor films via OEMT, whereas the high accuracy of d and Δd allow for the accurate computation of the complex refractive index, N (λ), of the film. In this paper is a proposed envelope method, named OEMR, for the characterization of thin dielectric or semiconductor films using only one quasi-normal incidence UV/Vis/NIR reflectance spectrum, R(λ), of the film on the substrate. References Issue
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