Autors: Jakovenko J., Lalinsky T., Drzik M., Ivanova, M. S., Husak M.
Title: GaN, GaAs and Silicon based Micromechanical Free Standing Hot Plates for Gas Sensors
Keywords: MEMS hot plate, Gas sensor

Abstract: Main objective of the presented work deals with design, modelling and characterization of new micro machined GaAs and GaN based hot plate thermal converters, which are considered to operate with high temperature metal oxide gas sensors, that can analyse various gases, such as CO, H2, NOx and hydrocarbons. The thermal and mechanical properties of GaAs and GaN based hot plates are compared with Silicon based hot plate. A new GaN based suspended membrane-type hot plate MEMS processing technology was developed for operationg temperature range up to 1000°C. The processing technology is also well-suited with the GaAs and GaN MESFET or HEMT devices, which enable integration of signal processing electronics into one chip with the MEMS gas sensors.

References

    Issue

    Eurosensors 23rd Conference, Procedia Chemistry, vol. 1, issue 1, pp. 804-807, 2009, Switzerland, Elsevier Procedia, ISSN: 18766196, DOI:/10.1016/j.proche.2009.07.200

    Copyright Elsevier B.V.

    Цитирания (Citation/s):
    1. Vittoz, S., Rufer, L., Rehder, G., Heinle, U., Benkart, P., Analytical and numerical modeling of AlGaN/GaN/AlN heterostructure based cantilevers for mechanical sensing in harsh environments, Procedia Engineering 5, pp. 91-94, 2010, ISSN: 18777058, DOI: 10.1016/j.proeng.2010.09.055 - 2010 - в издания, индексирани в Scopus или Web of Science
    2. Griessler C. et al., Tin oxide nanosensors for highly sensitive toxic gas detection and their 3D system integration, Microelectronic Engineering 88(8), pp. 1779-1781, 2011, ISSN: 01679317, DOI: 10.1016/j.mee.2011.02.017 - 2011 - в издания, индексирани в Scopus или Web of Science
    3. Vittoz, S., Rufer, L., Rehder, G., Srnanek, R., Kovac, J., Study of built-in stress distribution in AlGaN/GaN/AlN heterostructure based cantilevers for mechanical sensing in harsh environments, Proceedings of the 4th IEEE International Workshop on Advances in Sensors and Interfaces, IWASI 2011 6004678, pp. 17-20, ISBN: 978-145770622-6, DOI: 10.1109/IWASI.2011.6004678 - 2011 - в издания, индексирани в Scopus или Web of Science
    4. Vittoz, S., Rufer, L., Rehder, G., Heinle, U., Benkart, P., Analytical and numerical modelling of AlGaN/GaN/AlN heterostructure based cantilevers for mechanical sensing in harsh environments, Sensors and Actuators, A: Physical 172(1), 2011, pp. 27-34, ISSN: 09244247, DOI: 10.1016/j.sna.2011.02.024 - 2011 - в издания, индексирани в Scopus или Web of Science
    5. Brunet, E., Mutinati, G.C., Steinhauer, S., Köck, A., Oxide Ultrathin Films in Sensor Applications, Oxide Ultrathin Films, pp. 239-263, 2012, ISBN: 978-352733016-4, DOI: 10.1002/9783527640171.ch10 - 2012 - в издания, индексирани в Scopus или Web of Science
    6. Huang C-Y, Chung P-H, Shyu JZ, Ho Y-H, Wu C-H, Lee M-C, Wu M-J. Evaluation and Selection of Materials for Particulate Matter MEMS Sensors by Using Hybrid MCDM Methods. Sustainability. 2018; 10(10):3451. https://doi.org/10.3390/su10103451 - 2018 - в издания, индексирани в Scopus или Web of Science
    7. Guo, X., Gosalvez, M.A., Xing, Y., Chen, Y., Etch and growth rates of GaN for surface orientations in the <0001> crystallographic zone: Step flow and terrace erosion/filling via the Continuous Cellular Automaton, Materials Science in Semiconductor Processing 153,2023, ISSN: 13698001, DOI: 10.1016/j.mssp.2022.107173 - 2023 - в издания, индексирани в Scopus или Web of Science

    Вид: пленарен доклад в международен форум, публикация в реферирано издание, индексирана в Scopus