Autors: Angelov, G. V., Spasova, M. L., Garistov, V., Nikolov, D. N., Ruskova, I. N., Rusev, R. P., Gieva, E. E., Radonov, R. I., Georgiev, Y., Ghosh, S., Khan, M. B.
Title: Compact Model of JNT for Air-Pollution Sensor
Keywords: Junctionless Nanowire Transistor, Air-Pollution Sensor, Comp

Abstract: Compact model for describing the behavior of junctionless nanowire transistor (JNT) is adapted based on the core compact model of J. P. Collinge [1], [2]. The model is implemented in Matlab. The modeled JNT is the basic device of an air-pollution sensor for detecting atmospheric radicals in real-time that is developed under the EU-funded research project RADICAL. The following device configurations are modeled and compared versus experimental measurements of prototypes fabricated at the Institute of Ion Beam Physics and Materials Research, HZDR (Germany). Modeled device structures were fabricated from ultra-thin silicon-on-insulator (SOI) substrates. The substrates consisted of layers of silicon-insulator-silicon stacked on top of each other. Nanowires with length of 3 m and cross-section 20×20 nm were formed on top of the substrate. The fabrication accuracy of the nanowire width varies around 30%.


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  3. Shubham Sahay, Mamidala Jagadesh Kumar, “Junctionless Field-Effect Transistors: Design, Modeling, and Simulation”, IEEE Press Series on Microelectronic Systems, ISBN: 1119523532, 9781119523536


The 46th International Spring Seminar On Electronics Technology, 10th – 14th May 2023, pp. 1-5, 2023, Romania,

Вид: пленарен доклад в международен форум, индексирана в Scopus