Autors: Mladenov, V. M.
Title: Application and Analysis of Modified Metal-Oxide Memristor Models in Electronic Devices
Keywords: metal-oxide memristors; modified memristor models; memory cr

Abstract: The design of memristor-based electronic circuits and devices gives researchers opportunities for the engineering of CMOS-memristor-based electronic integrated chips with ultra-high density and various applications. Metal-oxide memristors have good compatibility with the present CMOS integrated circuits technologies. The analysis of new electronic circuits requires suitable software and fast-functioning models. The main purpose of this paper is to propose the application of several modified, simplified, and improved metal-oxide memristor models in electronic devices and provide a comparison of their behavior, basic characteristics, and properties. According to this, LTSPICE is utilized in this paper because it is a free software product with good convergence. Several memristor-based electronic circuits, such as non-volatile passive and hybrid memory crossbars, a neural network, and different reconfigurable devices–filters, an amplifier, and a generator are analyzed in the LTSPICE envi

References

    Issue

    Technologies, vol. 11, issue 1, pp. 1-20, 2023, Switzerland, MDPI, https://doi.org/10.3390/technologies11010020

    Цитирания (Citation/s):
    1. Sowmya, R.R., Sumanth, A., Kailath, B.J. and Dixit, T., 2023. “Development of Accurate Model for Memristor Based Filters and Oscillators: Amplitude, Frequency and Ramp-Rate Dependent Analysis,” IEEE Transactions on Circuits and Systems II: Express Briefs. doi: 10.1109/TCSII.2023.3307880 pp. 1-1 (Web of Science, Scopus, Google Scholar) SJR 1.266, IF 4.4 - 2023 - в издания, индексирани в Scopus или Web of Science
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    Вид: статия в списание, публикация в реферирано издание, индексирана в Scopus и Web of Science