Autors: Mladenov, V. M.
Title: Application of Metal Oxide Memristor Models in Logic Gates
Keywords: metal–oxide memristor models; modified window function; OR;

Abstract: Memristors, as new electronic elements, have been under rigorous study in recent years, owing to their good memory and switching properties, low power consumption, nano-dimensions and a good compatibility to present integrated circuits, related to their promising applications in electronic circuits and chips. The main purpose of this paper is the application and analysis of the operations of metal–oxide memristors in logic gates and complex schemes, using several standard and modified memristor models and a comparison between their behavior in LTSPICE at a hardswitching, paying attention to their fast operation and switching properties. Several basic logic gates—OR, AND, NOR, NAND, XOR, based on memristors and CMOS transistors are considered. The logic schemes based on memristors are applicable in electronic circuits with artificial intelligence. They are analyzed in LTSPICE for pulse signals and a hard-switching functioning of the memristors. The analyses confirm the proper, fast ope

References

    Issue

    Electronics, vol. 12, issue 2, pp. 1-14, 2023, Switzerland, MDPI, https://doi.org/10.3390/electronics12020381

    Цитирания (Citation/s):
    1. Sowmya, R.R., Sumanth, A., Kailath, B.J. and Dixit, T., 2023. Development of Accurate Model for Memristor Based Filters and Oscillators: Amplitude, Frequency and Ramp-Rate Dependent Analysis. IEEE Transactions on Circuits and Systems II: Express Briefs. ISSN 15497747, DOI 10.1109/TCSII.2023.3307880, pp. 1-1, (Web of Science, Scopus, Google Scholar) IF 4.4, SJR 1.266 - 2023 - в издания, индексирани в Scopus или Web of Science
    2. Miller, T., Durlik, I., Kostecka, E., Mitan-Zalewska, P., Sokołowska, S., Cembrowska-Lech, D. and Łobodzińska, A., 2023. Advancements in Artificial Intelligence Circuits and Systems (AICAS). Electronics, vol. 13, issue (1), p.102. (Web of Science, Scopus, Google Scholar) IF 2.9 - 2023 - в издания, индексирани в Scopus или Web of Science
    3. Joseph, D., Ramachandran, R., Karthikeyan, A. and Rajagopal, K., 2023. Synchronization Studies of Hindmarsh–Rose Neuron Networks: Unraveling the Influence of connection induced memristive synapse. Biosystems, 234, pp. 1-9, ISSN 03032647, DOI 10.1016/j.biosystems.2023.105069 (Scopus, Google Scholar) IF 1.8, SJR 0.37 - 2023 - в издания, индексирани в Scopus или Web of Science
    4. Summatta, C. and Sonasang, S., 2023. Enhanced Safety Logic Solver Utilizing 2oo3 Architecture with Memristor Integration. Engineering Proceedings, vol. 58, issue (1), pp. 1-6, https://doi.org/10.3390/ecsa-10-16006 (Scopus, Google Scholar) - 2023 - в издания, индексирани в Scopus или Web of Science
    5. Getvongsa, N., Norasan, A., Sonasang, S. and Summatta, C., 2024, March. “The Memristor's with Microcontroller and Digital to Analog Converter Module MCP4725,” In 2024 12th International Electrical Engineering Congress (iEECON) (pp. 1-5). IEEE. DOI: 10.1109/iEECON60677.2024.10537910, ISBN 979-835038359-1 (Scopus, Google Scholar) - 2024 - в издания, индексирани в Scopus или Web of Science

    Вид: статия в списание, публикация в издание с импакт фактор, публикация в реферирано издание, индексирана в Scopus и Web of Science