Autors: Mladenov, V. M.
Title: Application of Metal Oxide Memristor Models in Logic Gates
Keywords: metal–oxide memristor models; modified window function; OR;

Abstract: Memristors, as new electronic elements, have been under rigorous study in recent years, owing to their good memory and switching properties, low power consumption, nano-dimensions and a good compatibility to present integrated circuits, related to their promising applications in electronic circuits and chips. The main purpose of this paper is the application and analysis of the operations of metal–oxide memristors in logic gates and complex schemes, using several standard and modified memristor models and a comparison between their behavior in LTSPICE at a hardswitching, paying attention to their fast operation and switching properties. Several basic logic gates—OR, AND, NOR, NAND, XOR, based on memristors and CMOS transistors are considered. The logic schemes based on memristors are applicable in electronic circuits with artificial intelligence. They are analyzed in LTSPICE for pulse signals and a hard-switching functioning of the memristors. The analyses confirm the proper, fast ope



    Electronics, vol. 12, issue 2, pp. 1-14, 2023, Switzerland, MDPI,

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    Вид: статия в списание, публикация в издание с импакт фактор, публикация в реферирано издание, индексирана в Scopus и Web of Science