Autors: Kirilov, S. M., Zaykov, I. D.
Title: A Metal Oxide Memristor-Based Oscillators and Filters
Keywords: metal oxide memristors, nonlinear ionic dopant drift, activa

Abstract: Memristors are novel and nano-sized electronic passive elements with memorizing properties, potentially applicable in different electronic schemes, as neural networks, memory circuits, analog and digital devices, which design requires precise and simple models. In this paper, a modified and improved model of metal oxide memristors is proposed, in order to be used for preliminary engineering of memristorbased generators, filters and other electronic circuits. The offered model has a high accuracy, simplified math expressions and includes activation thresholds as well. Its corresponding LTSPICE library model is generated and applied for analysis of oscillators, low-pass and high-pass filters. The suggested model correctly expresses the nonlinear ionic dopant drift. The basic current-voltage and state-flux relationships are analyzed for both soft-switching and hard-switching modes. The conducted analyses and simulations confirm its correct operation in electronic circuits, representing t



    Proceedings of the Technical University of Sofia, pp. 32-37, 2022, Bulgaria, Technical University of Sofia, DOI 10.47978/TUS.2022.72.02.006

    Вид: публикация в международен форум, публикация в реферирано издание, индексирана в Google Scholar