Autors: Mladenov, V. M., Kirilov, S. M.
Title: An Improved Model for Metal Oxide-Based Memristors and Application in Memory Crossbars
Keywords: simplified memristor model , nonlinear ionic drift , transit

Abstract: Owing to their valuable properties, memristors are applicable in neural networks, memory crossbars, analog and digital programmable devices and others, and their design require simplified memristor models with a good precision. In this paper, a simple, accurate, highly nonlinear and fast operating metal oxide-based memristor model is proposed. Due to the use of a sine hyperbolic dependence between the time derivative of the state variable and voltage, the suggested model has a high precision and correctly represents the nonlinear dopant drift. Its equivalent LTSPICE library model includes activation thresholds and a differentiable sigmoid function, which prevents convergence problems. The model is applied and analyzed in a simple memory matrix. The model’s operation is in a good agreement with the main fingerprints of the memristors. Its correct functioning and applicability in complex electronic schemes are established.

References

    Issue

    IEEE Proceedings Conf. SMACD 2022, pp. 1-4, 2022, Italy, IEEE, DOI 10.1109/SMACD55068.2022.9816355

    Цитирания (Citation/s):
    1. Nevzorov, A.A., Burtsev, A.A., Kiselev, A.V., Mikhalevsky, V.A., Ionin, V.V., Eliseev, N.N. and Lotin, A.A., 2024. “Chaotic computing cell based on nanostructured phase-change materials,” Journal of Computational Electronics, vol. 23, issue (6), pp.1448-1454. ISSN 15698025, DOI 10.1007/s10825-024-02221-1 (Web of Science, Scopus, Google Scholar) SJR 0.294, IF 2.2 - 2024 - в издания, индексирани в Scopus или Web of Science

    Вид: публикация в международен форум, публикация в реферирано издание, индексирана в Scopus