| Autors: Mladenov, V. M., Kirilov, S. M. Title: An Improved Model for Metal Oxide-Based Memristors and Application in Memory Crossbars Keywords: simplified memristor model , nonlinear ionic drift , transit Abstract: Owing to their valuable properties, memristors are applicable in neural networks, memory crossbars, analog and digital programmable devices and others, and their design require simplified memristor models with a good precision. In this paper, a simple, accurate, highly nonlinear and fast operating metal oxide-based memristor model is proposed. Due to the use of a sine hyperbolic dependence between the time derivative of the state variable and voltage, the suggested model has a high precision and correctly represents the nonlinear dopant drift. Its equivalent LTSPICE library model includes activation thresholds and a differentiable sigmoid function, which prevents convergence problems. The model is applied and analyzed in a simple memory matrix. The model’s operation is in a good agreement with the main fingerprints of the memristors. Its correct functioning and applicability in complex electronic schemes are established. References Issue
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Вид: публикация в международен форум, публикация в реферирано издание, индексирана в Scopus
