Autors: Mladenov, V. M., Kirilov, S. M.
Title: A Modified Metal Oxide Memristor Model
Keywords: simple memristor model; nonlinear ionic drift; metal oxides;

Abstract: The memristor is a new and promising electronic memory element and could be a possible replacement for the present CMOS components. Due to its nano size, low energy usage and memory effect, it could be used in neural nets, memory crossbars, reconfigurable analogue and digital devices and other electronic schemes. In this paper, a simple, fast functioning modified metal oxide memristor model is suggested. Its corresponding LTSPICE library model is generated and successfully analyzed in a simple neural network. The model’s behavior is in accordance with the basic fingerprints of the memristor elements. Its proper operation and applicability in memristor-based devices is established.

References

    Issue

    11th IEEE International Conference on Modern Circuits and Systems Technologies, MOCAST 2022, pp. 1-4, 2022, Germany, IEEE, DOI 10.1109/MOCAST54814.2022.9837519

    Цитирания (Citation/s):
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    Вид: публикация в международен форум, публикация в реферирано издание, индексирана в Scopus