Autors: Mladenov, V. M., Kirilov, S. M., Zaykov, I. D.
Title: A General Model for Metal Oxide-Based Memristors and Application in Filters
Keywords: memristor model; nonlinear dopant drift; oxide memristors; L

Abstract: Memristors are novel and hopeful electronic memory components. They might be potential substitution of the CMOS elements. Owing to their nano dimensions, low power consumption and memorizing properties, the memristors could be applied in artificial neural networks, memory matrices, programmable analog and digital schemes and other electronic circuits. In this work, a modified and simple, fast operating transition metal oxide-based memristor model is proposed. Its respective LTSPICE library model is created and effectively analyzed in simple memristor-based analog filters. The model’s operation is in agreement with the main patterns of the memristive elements. Its correct functioning and applicability in memristor-based electronic circuits is confirmed.



    11th IEEE International Conference on Modern Circuits and Systems Technologies, MOCAST 2022, pp. 1-4, 2022, Germany, IEEE, DOI 10.1109/MOCAST54814.2022.9837766

    Цитирания (Citation/s):
    1. R. R. Sowmya, A. Sumanth, B. J. Kailath and T. Dixit, "Development of Accurate Model for Memristor Based Filters and Oscillators: Amplitude, Frequency and Ramp-Rate Dependent Analysis," 2023, in IEEE Transactions on Circuits and Systems II: Express Briefs, doi: 10.1109/TCSII.2023.3307880, pp. 1-1. (Web of Science, Scopus, Google Scholar) SJR 1.266, IF 4.4 - 2023 - в издания, индексирани в Scopus или Web of Science

    Вид: публикация в международен форум, публикация в реферирано издание, индексирана в Scopus и Web of Science