| Autors: Mladenov, V. M., Kirilov, S. M., Zaykov, I. D. Title: A General Model for Metal Oxide-Based Memristors and Application in Filters Keywords: memristor model; nonlinear dopant drift; oxide memristors; L Abstract: Memristors are novel and hopeful electronic memory components. They might be potential substitution of the CMOS elements. Owing to their nano dimensions, low power consumption and memorizing properties, the memristors could be applied in artificial neural networks, memory matrices, programmable analog and digital schemes and other electronic circuits. In this work, a modified and simple, fast operating transition metal oxide-based memristor model is proposed. Its respective LTSPICE library model is created and effectively analyzed in simple memristor-based analog filters. The model’s operation is in agreement with the main patterns of the memristive elements. Its correct functioning and applicability in memristor-based electronic circuits is confirmed. References Issue
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Цитирания (Citation/s):
1. R. R. Sowmya, A. Sumanth, B. J. Kailath and T. Dixit, "Development of Accurate Model for Memristor Based Filters and Oscillators: Amplitude, Frequency and Ramp-Rate Dependent Analysis," 2023, in IEEE Transactions on Circuits and Systems II: Express Briefs, doi: 10.1109/TCSII.2023.3307880, pp. 1-1. (Web of Science, Scopus, Google Scholar) SJR 1.266, IF 4.4 - 2023 - в издания, индексирани в Scopus или Web of Science
2. Zhu, W., He, Y.X., Li, H.N., Liu, X.Q., Zhang, S.W., Wang, L., Zhu, J., Wang, Y.Q., Zhang, J., Hao, Y. and Ma, H.H., 2024. “Cascade and extensible in-memory arithmetic computing in 2T1R ReRAM arrays using Time-Sum-Logic design,” IEEE Access. pp. 104081 – 104090, ISSN 21693536, DOI 10.1109/ACCESS.2024.3431206 (Web of Science, Scopus, Google Scholar) IF 3.4, SJR 0.96 - 2024 - в издания, индексирани в Scopus или Web of Science
Вид: публикация в международен форум, публикация в реферирано издание, индексирана в Scopus и Web of Science
