Autors: Mladenov, V. M., Zaykov, I. D., Kirilov, S. M.
Title: Application of a Nonlinear Drift Memristor Model in Analogue Reconfigurable Devices
Keywords: Modified memristor model , Step-like differentiable function

Abstract: In this paper, a highly nonlinear drift transition metal oxide-based memristor model and its applications in analogue reconfigurable devices are considered. In a combination with a nonlinear window function, containing a smooth and differentiable step-like function, its incorporation and analysis in LTSPICE environment are described. Several memristor-based analogue reconfigurable circuits, as an integrator, a differentiating circuit, and a band-pass filter are analysed, applying the modified memristor model. The considered model is with an increased nonlinearity, has activation thresholds and successfully represents the boundary effects for hard-switching operation. The alteration of the characteristics of the considered devices is founded on the change of memductance. The terminal state problems are also avoided, due to the applied step-like function. The derived results are compared with those, obtained from several existing memristor models and a good proximity is established. The



    IEEE Proceedings Conf. Electronics 2022, pp. 1-6, 2022, Lithuania, IEEE, DOI 10.1109/IEEECONF55059.2022.9810389

    Цитирания (Citation/s):
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    Вид: публикация в международен форум, публикация в реферирано издание, индексирана в Scopus и Web of Science