Autors: Alexandrova, S., Halova, E. Y., Szekeres, A., Vlaikova, E., Gartner, M., Anastasescu, M.
Title: “Annealing of Si surface region modified by plasma immersion implantation of nitrogen”
Keywords: Annealing, Si surface, plasma immersion

Abstract: In the present work, the formation of a nano-scale Si surface layer is studied after high-temperature annealing of Si modified by shallow plasma immersion implantation of nitrogen with fluences of 1016 - 1018 cm-2. The implanted profiles of the atomic (N+) and molecular nitrogen (N2+) are modeled by SRIM for different annealing durations taking into account the diffusion process. The presence of Si-O and Si-N bonds is established by Fourier (FTIR) spectral analysis and spectroscopic ellipsometry (SE). The refractive index value measured at 632.8 nm varies between 1.46 and 1.59, corresponding to a low y/x ratio. The models using VIS and IR ellipsometric data reveal formation of nanostructured SiOxNy layer with Si inclusions.

References

    Issue

    Journal of Physics: Conference Series, vol. 356, 2012, United Kingdom, DOI 10.1088/1742-6596/356/1/012031, ISSN 17426588

    Цитирания (Citation/s):
    1. Kuryliuk, V.V.; Korotchenkov, O.A.; Tsybrii, Z.F.; Nikolenko, A.S., Strelchuk, V.V.,“Features of Stress State of Germanium Nanocrystals in SiOx Matrix”, Journal of Nano- and Electronic Physics, Vol. 7, Issue 1, (2015), pp. 5, Article number 01029, ISSN:2077-6772 - 2015 - в издания, индексирани в Scopus и/или Web of Science
    2. Li A., Hoshii T., Tsutsui K., Wakabayashi H., Kakushima K., Interface properties of SiC MOS devices with NH3 plasma nitridation of ultrathin SiO2 interfacial layer, 2025, Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, issue 3, vol. 64, DOI 10.35848/1347-4065/adb8b0, issn 00214922, eissn 13474065 - 2025 - в издания, индексирани в Scopus

    Вид: публикация в международен форум, публикация в издание с импакт фактор, публикация в реферирано издание, индексирана в Scopus