Autors: Andonova, A. V., Toteva I.P.
Title: Simulation of LNA in 0.18мm CMOS Technology
Keywords: LNA design, RF CMOS, simulation

Abstract: In the paper an approach for redesign and simulation of narrow band LNA for UHF application is discussed. Several parameters, which are very important in design and verification of low noise amplifiers, are presented. These parameters can show how the amplifier is going to work after ESD structures being incorporated in the design. A low noise amplifier for future studying ESD protection structures are simulated in 0.35мm and 0.18 мm CMOS technologies.



    ANNUAL JOURNAL OF ELECTRONICS, vol. 5, issue 2, pp. 149-153, 2011, Bulgaria, TUS

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