Autors: Dimitrov, V. V., Goranov, P. T., Hvarchilkov, D. S.
Title: An analytical approach to model the switching losses of a power MOSFET
Keywords: Equivalent circuits, Integrated circuit modeling, Mathematic

Abstract: The paper presents a new analytical approach to modelling of the switching process of a Power MOSFET. The standard method to obtain an analytical solution is to neglect some of the elements in the behavioural model, in order to simplify the analysed circuit to one, that can be modelled with a second order differential equation. This paper explores another more general approach, where the analysis is carried out without simplifications in the resulting circuit. These are made in the final step of finding the roots of the resulting characteristic polynomial, thus also allowing for an analytical solution. The obtained switching losses are then compared between the presented model, models already published and the ones obtained via experiment.

References

    Issue

    Power Electronics and Motion Control Conference (PEMC), 2016 IEEE International, 2016, Bulgaria, IEEE, ISBN 978-1-5090-1798-0

    Copyright IEEE

    Цитирания (Citation/s):
    1. Guillaume Guérin, Gabriel A. Rincón-Mora, "Understanding and Quantifying iDS-VDSOverlap Losses in Switched-Inductor Power Supplies", Electronics Circuits and Systems (ICECS) 2020 27th IEEE International Conference on, pp. 1-4, 2020. - 2020 - в издания, индексирани в Scopus или Web of Science
    2. Zhiyuan Qi, Yunqing Pei, Laili Wang, Kangping Wang, Mengyu Zhu, Cheng Zhao, Qingshou Yang, Yongmei Gan, "An Accurate Datasheet-Based Full-Characteristics Analytical Model of GaN HEMTs for Deadtime Optimization", Power Electronics IEEE Transactions on, vol. 36, no. 7, pp. 7942-7955, 2021. - 2021 - в издания, индексирани в Scopus или Web of Science

    Вид: постер/презентация в международен форум, публикация в реферирано издание, индексирана в Scopus