|Autors: Dimitrov, V. V., Goranov, P. T., Hvarchilkov, D. S.|
Title: An analytical approach to model the switching losses of a power MOSFET
Keywords: Equivalent circuits, Integrated circuit modeling, Mathematical model, Semiconductor device modeling, Analytical models, MOSFET
Abstract: The paper presents a new analytical approach to modelling of the switching process of a Power MOSFET. The standard method to obtain an analytical solution is to neglect some of the elements in the behavioural model, in order to simplify the analysed circuit to one, that can be modelled with a second order differential equation. This paper explores another more general approach, where the analysis is carried out without simplifications in the resulting circuit. These are made in the final step of finding the roots of the resulting characteristic polynomial, thus also allowing for an analytical solution. The obtained switching losses are then compared between the presented model, models already published and the ones obtained via experiment.
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2. Zhiyuan Qi, Yunqing Pei, Laili Wang, Kangping Wang, Mengyu Zhu, Cheng Zhao, Qingshou Yang, Yongmei Gan, "An Accurate Datasheet-Based Full-Characteristics Analytical Model of GaN HEMTs for Deadtime Optimization", Power Electronics IEEE Transactions on, vol. 36, no. 7, pp. 7942-7955, 2021. - 2021 - в издания, индексирани в Scopus или Web of Science
Вид: постер/презентация в международен форум, публикация в реферирано издание, индексирана в Scopus