Autors: Rizanov, S. M., Nikolov, D. N., Ganev, B. T., Marinov, M. B., Angelov, G. V., Garistov, V. M., Vitanov, R. I.
Title: Predictive Modeling of Variation of Electrical Parameters Induced by Thermal Stress
Keywords: component modeling, reliability, thermal stress

Abstract: Within this work we have investigated how thermal stress influences the performance and reliability of electronic components. Of interest were the underlying physical processes, which guide thermal degradation of MOS transistors, electrolytic capacitors and solder joints. Based on these models constructed was a physically-informed dataset which was then subjected to analysis. Its utility for inferring rates of thermal degradation of consumer, industrial, automotive and military rated components was investigated.

References

  1. Lau, J. (Ed.). (2012). Thermal stress and strain in microelectronics packaging. Springer Science & Business Media.
  2. Nelson, W. B. (2009). Accelerated testing: statistical models, test plans, and data analysis. John Wiley & Sons.
  3. Pham, H. (2007). System software reliability. Springer Science & Business Media.
  4. Syed, A. (2004). Coffin–Manson fatigue model for lead-free solder joints. In SMTA International Conference Proceedings.
  5. Meeker, W. Q., Escobar, L. A., & Pascual, F. G. (2021). Statistical methods for reliability data. John Wiley & Sons.
  6. Pecht, M., & Gu, J. (2009). Physics-of-failure-based prognostics for electronic products. Transactions of the Institute of Measurement and Control, 31(3-4), 309-322.
  7. Belaïd, M. A., Ketata, K., Masmoudi, M., Gares, M., Maanane, H., & Marcon, J. (2006). Electrical parameters degradation of power RF LDMOS device after accelerated ageing tests. Microelectronics Reliability, 46(9-11), 1800-1805.
  8. IEC 62380 Technical Committee. (2004). Reliability data handbook-universal model for reliability prediction of electronics components, PCBs and equipment. IEC TR 62380.
  9. United States. Dept. of Defense. (1991). Reliability prediction of electronic equipment. US Department of Defense.
  10. Darveaux, R. (2002). Effect of simulation methodology on solder joint crack growth correlation and fatigue life prediction. J. Electron. Packag., 124(3), 147-154.
  11. Tu, K. N. (2003). Recent advances on electromigration in very-large-scale-integration of interconnects. Journal of applied physics, 94(9), 5451-5473.
  12. J. H. Stathis, "Gate Oxide Reliability for Nano-Scale CMOS," 2006 25th International Conference on Microelectronics, Belgrade, Serbia, 2006, pp. 78-83, doi: 10.1109/ICMEL.2006.1650900.
  13. Franco, J., Kaczer, B., & Groeseneken, G. (2014). Reliability of high mobility SiGe channel MOSFETs for future CMOS applications. Springer Netherlands.
  14. Schroder, D. K. (2015). Semiconductor material and device characterization. John Wiley & Sons.
  15. Diers, T. A. (Texas Instruments). Understanding and Modeling MOSFET Aging.
  16. Huard, V. (2010, May). Two independent components modeling for negative bias temperature instability. In 2010 IEEE International Reliability Physics Symposium (pp. 33-42). IEEE.
  17. Wang, W., & Christer, A. H. (2000). Towards a general condition based maintenance model for a stochastic dynamic system. Journal of the operational research society, 51(2), 145-155.

Issue

2025 34th International Scientific Conference Electronics, ET 2025 - Proceedings, 2025, Bulgaria, https://doi.org/10.1109/ET66806.2025.11204061

Вид: публикация в международен форум, публикация в реферирано издание, индексирана в Scopus